List of publications and related citations available on Google Scholar and Scopus (36570318300).
Find me also on ORCID (0000-0002-3288-8951) and ResearcherID (B-5932-2016).
Some preprint can be found on arXiv.org.

Peer-reviewed articles

  1. Assessment and optimization of the fast inertial relaxation engine (FIRE) for energy minimization in atomistic simulations and its implementation in LAMMPS
    J Guénolé, W G Nöhring, A Vaid, F Houllé, Z Xie, A Prakash, E Bitzek
    Preprint arXiv:1908.02038 (2019)
  2. Atomistic Simulations of Basal Dislocations Interacting with Mg17Al12 Precipitates in Mg
    A Vaid, J Guénolé, A Prakash, S Korte-Kerzel, E Bitzek
    MATERIALIA 7 (2019) 100355
    DOI: 10.1016/j.mtla.2019.100355 (Preprint arXiv:1902.09446 )
  3. Basal slip in Laves phases: The synchroshear dislocation
    J Guénolé, F-Z Mouhib, L Huber, B Grabowski, S Korte-Kerzel
    SCRIPTA MATERIALIA 166 (2019) 134-138
    DOI: 10.1016/j.scriptamat.2019.03.016 (Preprint arXiv:1902.01646 )
  4. Ti and its alloys as examples of cryogenic focused ion beam milling of environmentally-sensitive materials
    Y Chang, W Lu, J Guénolé, L Stephenson, A Szczpaniak, P Kontis, A Ackerman, F Dear, I Mouton, X Zhong, S Zhang, D Dye, C Liebscher, D Ponge, S Korte-Kerzel, D Raabe, B Gault
    NATURE COMMUNICATIONS 10 (2019) 942 [related news]
    DOI: 10.1038/s41467-019-08752-7
  5. Atomistic simulations of focused ion beam machining of strained silicon
    J Guénolé, A Prakash, E Bitzek
    APPLIED SURFACE SCIENCE 416 (2017) 86-95
    DOI: 10.1016/j.apsusc.2017.04.027
  6. Influence of intrinsic strain on irradiation induced damage: the role of threshold displacement and surface binding energies
    J Guénolé, A Prakash, E Bitzek
    MATERIALS & DESIGN 111 (2016), 405-413
    DOI: 10.1016/j.matdes.2016.08.077
  7. Quantifying eigenstrain distributions induced by focused ion beam damage in silicon
    A. M. Korsunsky, J Guénolé, E Salvati, T Sui, M Mousavi, A Prakash, E Bitzek
    MATERIALS LETTERS 185 (2016), 47-49
    DOI: 10.1016/j.matlet.2016.08.111
  8. Atom probe informed simulations of dislocation–precipitate interactions reveal the importance of local interface curvature
    A Prakash, J Guénolé, J Wang, J Müller, E Spiecker, MJ Mills, I Povstugar, P Choi, D Raabe, E Bitzek
    ACTA MATERIALIA 92 (2015), 33-45
    DOI: 10.1016/j.actamat.2015.03.050 | Top25
  9. A new parametrization of the Stillinger–Weber potential for an improved description of defects and plasticity of silicon
    L Pizzagalli, J Godet, J Guénolé, S Brochard, E Holmstrom, K Nordlund, T Albaret
    JOURNAL OF PHYSICS: CONDENSED MATTER 25 (2013), 055801
    DOI: 10.1088/0953-8984/25/5/055801
  10. Plasticity in crystalline-amorphous core-shell Si nanowires controlled by native interface defects
    J Guénolé, J Godet, S Brochard
    PHYSICAL REVIEW B 87 (2013), 045201
    DOI: 10.1103/PhysRevB.87.045201
  11. Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures: Atomistic study
    J Guénolé, S Brochard, J Godet
    ACTA MATERIALIA 59 (2011), 7464-7472
    DOI: 10.1016/j.actamat.2011.08.039
  12. Deformation of silicon nanowires studied by molecular dynamics simulations
    J Guénolé, J Godet, S Brochard
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING 19 (2011), 074003
    DOI: 10.1088/0965-0393/19/7/074003
  13. Determination of activation parameters for the core transformation of the screw dislocation in silicon
    J Guénolé, J Godet, L Pizzagalli
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING 18 (2010), 065001
    DOI: 10.1088/0965-0393/18/6/065001

Book chapters

  1. Review on the mechanical properties of nanowires investigated by simulations
    J. Godet, J. Guénolé, S. Brochard, L. Pizzagalli
    PRESSE DES MINES editions (2011)
    Edited by Samuel Forest, Anne Ponchet and Olivier Thomas
    ISBN : 978-2911256-67-7

    ISBN : 978-2911256-67-7

Conference proceedings

  1. Investigation of Plasticity in Silicon Nanowires by Molecular Dynamics Simulations
    J Guénolé, J Godet, S Brochard
    KEY ENGINEERING MATERIALS 465 (2011), 89-92
    DOI: 10.4028/www.scientific.net/KEM.465.89
  2. Dislocation cores in silicon: new aspects from numerical simulations
    L Pizzagalli, J Godet, J Guénolé, S Brochard
    JOURNAL OF PHYSICS: CONFERENCE SERIES 281 (2011), 012002
    DOI: 10.1088/1742-6596/281/1/012002