List of publications and related citations available on Google Scholar and Scopus (36570318300).
Find me also on ORCID (0000-0002-3288-8951) and ResearcherID (B-5932-2016).

Peer-reviewed articles

  1. Atomistic simulations of focused ion beam machining of strained silicon
    J Guénolé, A Prakash, E Bitzek
    APPLIED SURFACE SCIENCE 416 (2017) 86-95
    DOI: 10.1016/j.apsusc.2017.04.027
  2. Influence of intrinsic strain on irradiation induced damage: the role of threshold displacement and surface binding energies
    J Guénolé, A Prakash, E Bitzek
    MATERIALS & DESIGN 111 (2016), 405-413
    DOI: 10.1016/j.matdes.2016.08.077
  3. Quantifying eigenstrain distributions induced by focused ion beam damage in silicon
    A. M. Korsunsky, J Guénolé, E Salvati, T Sui, M Mousavi, A Prakash, E Bitzek
    MATERIALS LETTERS 185 (2016), 47-49
    DOI: 10.1016/j.matlet.2016.08.111
  4. Atom probe informed simulations of dislocation–precipitate interactions reveal the importance of local interface curvature
    A Prakash, J Guénolé, J Wang, J Müller, E Spiecker, MJ Mills, I Povstugar, P Choi, D Raabe, E Bitzek
    ACTA MATERIALIA 92 (2015), 33-45
    DOI: 10.1016/j.actamat.2015.03.050 | Top25
  5. A new parametrization of the Stillinger–Weber potential for an improved description of defects and plasticity of silicon
    L Pizzagalli, J Godet, J Guénolé, S Brochard, E Holmstrom, K Nordlund, T Albaret
    JOURNAL OF PHYSICS: CONDENSED MATTER 25 (2013), 055801
    DOI: 10.1088/0953-8984/25/5/055801
  6. Plasticity in crystalline-amorphous core-shell Si nanowires controlled by native interface defects
    J Guénolé, J Godet, S Brochard
    PHYSICAL REVIEW B 87 (2013), 045201
    DOI: 10.1103/PhysRevB.87.045201
  7. Unexpected slip mechanism induced by the reduced dimensions in silicon nanostructures: Atomistic study
    J Guénolé, S Brochard, J Godet
    ACTA MATERIALIA 59 (2011), 7464-7472
    DOI: 10.1016/j.actamat.2011.08.039
  8. Deformation of silicon nanowires studied by molecular dynamics simulations
    J Guénolé, J Godet, S Brochard
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING 19 (2011), 074003
    DOI: 10.1088/0965-0393/19/7/074003
  9. Determination of activation parameters for the core transformation of the screw dislocation in silicon
    J Guénolé, J Godet, L Pizzagalli
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING 18 (2010), 065001
    DOI: 10.1088/0965-0393/18/6/065001

Book chapters

  1. Review on the mechanical properties of nanowires investigated by simulations
    J. Godet, J. Guénolé, S. Brochard, L. Pizzagalli
    PRESSE DES MINES editions (2011)
    Edited by Samuel Forest, Anne Ponchet and Olivier Thomas
    ISBN : 978-2911256-67-7

    ISBN : 978-2911256-67-7

Conference proceedings

  1. Investigation of Plasticity in Silicon Nanowires by Molecular Dynamics Simulations
    J Guénolé, J Godet, S Brochard
    KEY ENGINEERING MATERIALS 465 (2011), 89-92
    DOI: 10.4028/www.scientific.net/KEM.465.89
  2. Dislocation cores in silicon: new aspects from numerical simulations
    L Pizzagalli, J Godet, J Guénolé, S Brochard
    JOURNAL OF PHYSICS: CONFERENCE SERIES 281 (2011), 012002
    DOI: 10.1088/1742-6596/281/1/012002